助熔剂法生长ZnO晶体(英文)

来源 :人工晶体学报 | 被引量 : 0次 | 上传用户:zhuhuajian21004
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采用Bi4B2O9、CdB2O4和BaB2O4为助熔剂,获得了毫米级的氧化锌单晶。Mulliken的电负性理论和Viting的平均轨道电负性提供了一个选择晶体生长所采用的助熔剂的有效方法。实验结果表明ZnO晶体的生长温度比文献报道的均低,从而有效地减少了ZnO以及助熔剂的挥发。本文给出了几种有望获得大尺寸ZnO单晶的助熔剂。 Using Bi4B2O9, CdB2O4 and BaB2O4 as fluxes, a millimeter-scale zinc oxide single crystal was obtained. Mulliken’s electronegativity theory and Viting’s average orbital electronegativity provide an efficient method of selecting the flux to be used for crystal growth. The experimental results show that the growth temperature of ZnO crystal is lower than that reported in the literature, which effectively reduces the volatilization of ZnO and flux. This article presents several promising fluxes for large size ZnO single crystals.
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