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本征的强离子性，使ZnSe基半导体蓝绿激光器易于形成堆垛层错等退化缺陷，严重地影响了器件的寿命。人们便开始将注意力投向离子性较低的Be基化合物，希望用Be基Ⅱ-Ⅵ族材料取代ZnSe基材料，抑制蓝绿激光器的退化。要研制半导体激光器，电学限制层对发光活性层中载流子的约束能力（即能带的offset值）是最重要的基本参数之一。由于对Be基化合物的了解十分有限，本文从基本的原子参数出发，用原子轨道线性组合（LCAO）理论计算了所有Ⅱ-Ⅵ族化合物价带顶的相对位置，结合带隙的实验值，给出了Ⅱ-Ⅵ族化合物导带底的相对位置。简要分析了二元化合物用于BeTe中载流于约束的可能性。根据虚晶近似，用插值方法计算了与GaAs匹配的Be基四元合金相对与BeTe价带、导带的offset。对各四元合金的特征进行了分析对比，讨论了Be基四元合金用作我流子约束层的可能性。为制作Be基半导体蓝绿激光器提供了能带剪裁的理论依据。
Intrinsic strong ion, ZnSe-based semiconductor blue-green laser easy to form degradation defects such as stacking faults, seriously affecting the life of the device. People began to pay attention to the lower ionic Be based compounds, hope to use Be group II-VI materials instead of ZnSe base material, inhibit the degradation of blue-green laser. To develop semiconductor lasers, the electrical confinement layer of light-emitting active layer carrier confinement capacity (ie band offset value) is one of the most important basic parameters. Because of the limited understanding of Be based compounds, this paper, based on the basic atomic parameters, calculated the relative positions of the valence bands of all II-VI compounds by using the theory of atomic orbitals linear combination (LCAO) The relative position of the bottom of the II-VI compound conduction band is shown. A brief analysis of the possibility of binary compounds for BeTe current-carrying constraints is given. According to the virtual crystal approximation, the offset of the valence band and the conduction band of the Be-based quaternary alloy matched with GaAs and the BeTeTe is calculated by the interpolation method. The characteristics of each quaternary alloy were analyzed and compared, and the possibility of using Be based quaternary alloy as a melange constraint layer was discussed. For the production of Be based semiconductor blue-green laser band to provide a theoretical basis for cutting.