Diodes公司推出全新20V NPN及PNP双极晶体管,它们采用超小型DFN1411-3表面贴装封装,能大大提升电源管理电路的功率密度和效率。该器件采用了Diodes第五代矩阵射极双极工艺设计(5 matrix emitter Bipolar process)。这对互补性器件ZXTN26020DMF和ZXTP26020DMF的占位面积只有1.1毫米×1.4毫米,离版高度为0.5毫米,有助于设计出极其纤巧的便携式产品,还可改善产品的电性能及热特性。 Diodes Corporation introduces the new 20V NPN and PNP bipolar transistors in ultra-small DFN1411-3 surface-mount packages that greatly enhance the power density and efficiency of power management circuitry. The device uses the Diodes fifth generation matrix emitter bipolar process design (5 matrix emitter Bipolar process). The complementary devices ZXTN26020DMF and ZXTP26020DMF have a footprint of only 1.1mm x 1.4mm and off-height of 0.5mm, helping to design extremely slim and portable products while also improving the electrical and thermal characteristics of the product.