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导出了杨氏模量和生长温度各不相同的多层结构的热应变弯曲半径和层内应力的普遍公式,包括衬底具有固有弯曲的情况,并给出在不同条件下公式的特殊形式,尤其是有较广泛应用的厚衬底条件下的近似式.应用导出的公式,计算了有源区掺Al和具有缓冲层的GaAlAs DH激光器中有源层应力随各层厚度和Al组分的变化,得到有源层应力为零的条件的显式;研究了 MSTO GaAlAs多层结构的有源层内应力,计算了氧化层和金属层的贡献;还测量了GaAs上热氧化层Ga_2O_3的线胀系数和杨氏模量,此方法也适用于其他衬底上的薄层材料.
The general formulas of thermal strain bending radius and in-layer stress of multilayer structures with different Young’s modulus and growth temperature are derived, including the case where the substrate has an inherent curvature, and given the special form of the formula under different conditions, In particular, the approximation under the condition of thick substrate has been widely used.The stress of the active layer in Al-doped active layer and GaAlAs DH laser with buffer layer has been calculated with the derived formulas, The stress of the active layer is zero. The stress in the active layer of MSTO GaAlAs multi-layer structure is studied and the contribution of the oxide layer and the metal layer is calculated. The line of thermal oxidation layer Ga 2 O 3 on GaAs Expansion coefficient and Young’s modulus, this method also applies to other substrates on the thin layer of material.