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以InGaAs p-i-n管为例,研究了光电二极管在激光脉冲作用下非线性响应的内部机理特征,计算分析了二极管在强光辐照下内部空间电荷屏蔽效应对器件光电响应特性产生的影响.通过计算耗尽区的电场强度、载流子分布和电子-空穴的漂移速度,发现低偏置电压或强光辐照都会使耗尽区的电场强度下降,载流子的漂移和扩散速度降低到非饱和状态,使光生载流子的复合率下降,大量载流子聚集在耗尽区内,形成了空间电荷屏蔽效应,导致二极管呈非线性响应状态.在5V偏置电压条件下,增加皮秒激光的脉冲能量,光电二极管的光伏电压响应脉宽逐渐展宽,峰值电压呈非线性变化.
Taking InGaAs pin tube as an example, the internal mechanism of non-linear response of photodiode under laser pulse is studied, and the influence of internal space charge shielding effect of diode on photoelectric response characteristics under strong light irradiation is calculated and analyzed. Depletion region of the electric field strength, carrier distribution and electron-hole drift speed and found that low bias voltage or strong light irradiation will make the depletion region of the electric field strength, carrier drift and diffusion speed reduced to In the unsaturated state, the recombination rate of photo-generated carriers decreases and a large number of carriers accumulate in the depletion region, forming a space charge shielding effect, resulting in a non-linear diode response. Under the condition of 5V bias voltage, Pulse energy of the second laser, the voltage pulse width of the photodiode gradually widens and the peak voltage changes nonlinearly.