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使用中频磁控溅射方法进行正交实验,在Si基底上沉积非晶硅薄膜。利用n&k测试、拉曼光谱和XPS等方法表征,研究工作气压、电流、衬底温度等参数对制备非晶硅薄膜的沉积速率、光学特性及成分的影响。结果表明,中频磁控溅射制备非晶硅薄膜具有较大的O、C含量,但通过降低工作气压和提高溅射功率可有效降低O、C含量,得到光学特性和结构较好的非晶硅薄膜。
Orthogonal experiments were carried out by IF magnetron sputtering to deposit amorphous silicon thin films on Si substrate. The effects of working pressure, current and substrate temperature on the deposition rate, optical properties and composition of amorphous silicon thin films were investigated by n & k test, Raman spectroscopy and XPS. The results show that the amorphous silicon films prepared by medium frequency magnetron sputtering have a large content of O and C. However, the O and C content can be effectively reduced by reducing the working pressure and increasing the sputtering power. Silicon film.