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This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute’s Ga As p HEMT monolithic microwave integrated circuit(MMIC) technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 : 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm2.
This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute’s Ga As p HEMT monolithic microwave integrated circuit (MMIC) technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 : 8. The low-pass filter / high-pass filter combined matching is is to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. under a drain supply voltage of 5 V, the amplifier delivers 33-34 dBm saturated output power across the frequency range of 1.8 to 3 GHz with associated power-added efficiency of 35% -45% and very flat power gain of 25-26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm2.