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为了研究电子辐照导致CCD参数退化的损伤机理,以及CCD内不同沟道宽长比的NMOSFET的辐射效应,将与CCD同时流片的两种不同沟道宽长比的深亚微米NMOSFET进行电子辐照实验。分析了电子辐照导致NMOSFET阈值电压和饱和电流退化的情况,以及器件的辐射损伤敏感性。实验结果表明,电子辐照导致两种NMOSFET器件的参数退化情况以及辐射损伤敏感性类似。导致器件参数退化的主要原因是界面陷阱电荷,同时氧化物陷阱电荷表现出了一定的竞争关系。实验结果为研究CCD电子辐照导致的辐射效应提供了基础数据支持。
In order to study the damage mechanism of CCD parameter degradation caused by electron irradiation and the radiation effect of NMOSFET with different channel width-length ratio in CCD, two kinds of deep submicron NMOSFET with different channel width-to-length ratio Irradiation experiment. The threshold voltage and saturation current degeneration of NMOSFET caused by electron irradiation are analyzed, and the radiation damage sensitivity of the device is analyzed. The experimental results show that the electron irradiation causes similar degradation of the parameters of the two NMOSFET devices and the radiation damage sensitivity. The main reason for the degeneration of the device parameters is the interfacial trap charge, while the oxide trap charge shows a certain competitive relationship. The experimental results provide basic data support for studying the radiation effects caused by CCD electron irradiation.