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一、绪言在光纤通信中,因为光纤在1.3～1.6微米波长处有低的损耗窗口,就需要与此对应波长的半导体激光器,用IaGaAsP—InP材料作为光恰为合适。目前激光器正向低阀值电流密度,高转换效率、长寿命等方面发展,故半导体器件的检测分析尤为重要。应用扫描电镜双异质结激光器(简称DH—Laser)管芯观察分析,可以获得工艺上极为关心的数据——有源区宽度(0.2μm)和p-n结的位置。测量的准确度高与其它方法(磨角法、电化学c—v法)。而且观察直观、数据可靠,故SEM对DH—Laser观察分析深受工艺线科研人员的重视。
I. INTRODUCTION In optical fiber communication, because of the low loss window of the optical fiber at the wavelength of 1.3-1.6 μm, semiconductor lasers corresponding to this wavelength are needed, and it is appropriate that IaGaAsP-InP material be used as the light. At present, the laser is developing toward low threshold current density, high conversion efficiency and long life, so the detection and analysis of semiconductor devices are particularly important. Using the scanning electron microscope double heterostructure laser (DH-Laser) die observation and analysis, you can get the most concerned about the process of data - the active area width (0.2μm) and p-n junction location. Measurement accuracy and other methods (grinding angle method, electrochemical c-v method). And intuitive observation, reliable data, so the SEM DH-Laser observation and analysis by the technology line researchers attention.