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The electric characteristic of MOS capacitor with HfO_2/SiO_2/p-Si grown by ALCVD (atom layer chemical vapor deposition) is investigated. The C-V curves show that the accumulation capacitances take on the frequency dispersion at high frequency. For MOS capacitor with ultra thin HfO_2/SiO_2 gate stack, different fabrication processes and measurement equipment will cause parasitic effect. Here an equivalent circuit model that can eliminate the frequency dispersion effect is proposed. The C-V characteristics curve at high frequency shows some distortion because of the bulk defects and the interface states. This paper discusses the distortion of the high frequency MOS C-V characteristic curve. A data processing method is advanced and interface trap density distribution in the band gap is presented. By comparing the ideal C-V curve with the experimental C-V curve, the typical electrical parameters of MOS capacitor are extracted, including the shift of flat-band voltage, the oxide charges and the density of interface traps at the SiO_2/Si interface.
The electric characteristic of MOS capacitor with HfO_2 / SiO_2 / p-Si grown by ALCVD (atom layer chemical vapor deposition) is investigated. The CV curves show that the accumulation capacitances take on the frequency dispersion at high frequency. For MOS capacitor with ultra thin Here an equivalent circuit model that can eliminate the frequency dispersion effect is proposed. The CV characteristics curve at high frequency shows some distortion because of the bulk defects and the interface states. This paper discusses the distortion of the high frequency MOS CV characteristic curve. A comparison of ideal CV curve with the experimental CV curve, the typical electrical parameters of MOS capacitor are extracted, including the shift of flat-band voltage, the oxide charges an d the density of interface traps at the SiO_2 / Si interface.