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对电阻率为5 ·cm的p型单晶硅,在高温条件下采用扩散金属锰的方法,得到高补偿硅。并在室温(25℃)和液氮温度(196℃)下,测试了这种高补偿硅材料对光强的敏感性。测试结果表明:这种材料是一种光敏感材料,其敏感性受外加的电压、样品的温度及补偿后样品的电阻率影响。
For p-type monocrystalline silicon with a resistivity of 5 cm, diffused metal manganese is used under high temperature conditions to obtain highly compensated silicon. The sensitivity of this highly compensated silicon material to light intensity was also tested at room temperature (25 ° C) and liquid nitrogen temperature (196 ° C). Test results show that: This material is a light-sensitive material, the sensitivity of the applied voltage, the temperature of the sample and the compensated sample resistivity.