论文部分内容阅读
采用改进的布里奇曼法生长出CdSiP_2单晶体,运用X射线能谱仪、傅里叶变换红外分光光度计以及红外显微镜等对在不同气氛中退火前后的CdSiP_2晶体进行了组分元素、红外吸收系数以及红外透过均匀性测试,根据红外显微镜Mapping图像的标准差值评判了晶体的红外透过均匀性。研究结果表明,经真空、CdSiP_2粉末包裹、P/Cd(原子比为2:1)、Cd气氛等退火后,晶体组分元素的化学计量比、红外吸收系数和红外光学均匀性都得到了不同程度的改善,其中在1.29~2.00μm,经CdSiP_2粉末包裹退火后的晶体吸收系数改善显著,在1.92~1.98μm波段的红外透过均匀性提高了14.06%;而在Cd气氛下退火后晶体的吸收系数在2.00~6.50μm波段降低最为明显,在2.70~2.78μm波段红外透过均匀性提高了17.43%。分析讨论了在上述波段中引起晶体红外吸收和红外透过不均匀性的主要因素,研究出较为有效的CdSiP_2晶体退火工艺。
CdSiP_2 single crystals were grown by an improved Bridgman method. The components of the CdSiP_2 crystals before and after annealing in different atmospheres were characterized by X-ray energy dispersive spectroscopy, Fourier transform infrared spectrophotometer and infrared microscope. The infrared absorption Coefficient and infrared transmission uniformity test, the infrared transmission uniformity of the crystal was judged according to the standard deviation of the infrared microscope mapping image. The results show that the stoichiometry, infrared absorption coefficient and infrared optical uniformity of the crystal components are different after vacuum, CdSiP 2 powder coating, P / Cd (atomic ratio 2: 1) The crystal absorption coefficient of CdSiP_2 powder wrapped and annealed at 1.29 ~ 2.00μm is improved remarkably. The infrared transmission uniformity in the band of 1.92 ~ 1.98μm is increased by 14.06%. However, after annealing in Cd atmosphere, the crystallinity The absorption coefficient decreases most obviously in the range of 2.00 ~ 6.50μm, and the infrared transmission uniformity increases by 17.43% in the band of 2.70 ~ 2.78μm. The main factors that cause the infrared absorption and infrared transmission in the above wavelength band are analyzed and discussed, and the more effective annealing process of CdSiP 2 crystal is studied.