采用SILVACO软件的ATLAS对双有源层非晶铟镓锌氧化物薄膜晶体管进行二维器件模拟,研究了在底栅顶接触的结构下,不同沟道厚度比的情况下的器件的电学特性。在IZO材料的厚度为5nm、IGZO材料的厚度为35nm时,器件的最佳开关电流比约为3.5×1013,亚阈值摆幅为0.36V/dec。并在此厚度比的基础上,模拟了两层材料的隙态密度,并通过改变态密度模型中的相关参数,观察两层材料对器件的电学特性的影响情况。 ATLAS with SILVACO software is used to simulate the dual-layer amorphous indium gallium arsenide thin-film transistor with dual-active layer. The electrical properties of the device under different channel thickness ratios are studied under the structure of bottom gate top contact. When the thickness of IZO material is 5nm and the thickness of IGZO material is 35nm, the optimum switching current ratio of the device is about 3.5 × 1013 and the subthreshold swing is 0.36V / dec. On the basis of this thickness ratio, the gap density of two layers of material was simulated, and the effect of two layers of materials on the electrical characteristics of the device was observed by changing the relevant parameters in the density of states model.