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基于Ga As单片集成电路工艺,对接收通道的关键元器件低噪声放大器和电调衰减器进行了芯片化设计。采用基于多层高温共烧陶瓷埋线工艺设计的金属化陶瓷外壳,对接收通道进行了微组装。测试结果表明,该S波段接收通道接收动态范围大于60 d B,增益大于95 d B,噪声系数小于1.3 d B,本振抑制大于30 d Bc,中频信号的谐波抑制大于30 d Bc。当中频自动增益控制电路起控时,接收通道输出功率稳定在(2±0.5)d Bm。该接收通道采用+5 V供电,工作电流小于250 m A。整个接收通道的尺寸仅为20 mm×13.8 mm×5.75 mm,其性能优异且集成度非常高,小型化优势非常明显。
Based on Ga As monolithic integrated circuit technology, the key components of the receiver channel low-noise amplifier and electronic attenuator chip design. The receiving channels are micro-assembled using a metallized ceramic housing based on a multilayer high temperature co-fired ceramic embedding process. The experimental results show that the S-band receive channel has a dynamic range greater than 60 d B, a gain greater than 95 d B, a noise figure less than 1.3 d B, a LO greater than 30 d Bc and an intermediate-frequency signal greater than 30 d Bc. When the IF automatic gain control circuit is controlled, the receive channel output power is stable at (2 ± 0.5) d Bm. The receive channel is powered by +5 V and operates at less than 250 mA. The size of the entire receiving channel is only 20 mm × 13.8 mm × 5.75 mm, its performance and integration is very high, the advantages of small size is very obvious.