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介绍在部分耗尽绝缘体上硅(PDSOI)衬底上形成的抗辐射128kb静态随机存储器.在设计过程中,利用SOI器件所具有的特性,对电路进行精心的设计和层次化版图绘制,通过对关键路径和版图后全芯片的仿真,使得芯片一次流片成功.基于部分耗尽SOI材料本身所具有的抗辐射特性,通过采用存储单元完全体接触技术和H型栅晶体管技术,不仅降低了芯片的功耗,而且提高了芯片的总体抗辐射水平.经过测试,芯片的动态工作电流典型值为20mA@10MHz,抗总剂量率水平达到500krad(Si),瞬态剂量率水平超过2.45×1011rad(Si)/s.这些设计实践必将进一步推动PDSOICMOS工艺的研发,并为更大规模抗辐射电路的加固设计提供更多经验.
This paper introduces a 128kb static random access memory (SRAM) device formed on a partially depleted silicon-on-insulator (PDSOI) substrate.With the characteristics of SOI devices, the circuits are carefully designed and layered in the design process, Critical path and layout after the full chip simulation, making the chip a success of the chip.Based on partially depleted SOI material itself has anti-radiation characteristics, through the use of memory cell full body contact technology and H-type gate transistor technology, not only reduces the chip , And increases the overall radiation resistance of the chip.After testing, the chip’s dynamic operating current is typically 20mA @ 10MHz, the total anti-total dose rate reaches 500krad (Si), and the transient dose rate exceeds 2.45 × 1011rad Si) / s These design practices will further promote the development of the PDSOICMOS process and provide more experience in the design of reinforcement of larger scale anti-radiation circuits.