Monte Carlo simulations are adopted to study the electron transport process in the non-uniform electric field. Some important parameters of electrons in diamond films dynamic process at low temperature via EACVD such as angle distribution, energy distribution, average energy of electrons are given. The results indicate that the electron scattering n.ear the substrate is mainly of a large-angle scattering, exhibiting a double-peaking distribution. All of the conclusions provide some theoretical data referential to the vapor dynamic model of diamond film growth at low temperature via EACVD.