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利用简单的热蒸发CdS粉末方法,可合成出高质量的CdS微米柱。通过调控Si衬底上Au膜的厚度,能够大面积合成出尺寸均一的CdS纳米带和纳米棒。系统地研究了所合成样品的相、微结构和光致发光特性。室温下样品的发光结果表明可在所合成CdS微米柱上观察到位于约512 nm对应于其带隙的强发光峰。与CdS微米柱不同的是,可在所合成的CdS纳米带和纳米棒样品上分别观测到位于约521和543 nm,528和550 nm处对应于带边附近的发射强峰。并且,所合成的CdS纳米带和纳米棒展现出位于约710和712 nm位置处的宽峰,该峰的出现与结构缺陷、离子缺陷或杂质有关。与CdS纳米带的发光性能相比,所合成的CdS纳米棒表现出增强的发光性能。
Using a simple thermal evaporation of CdS powder method, high quality CdS micro-columns can be synthesized. By regulating the thickness of the Au film on the Si substrate, CdS nanoribbons and nanorods with uniform size can be synthesized on a large area. The phase, microstructure and photoluminescence properties of the synthesized samples were systematically investigated. The luminescence results of the samples at room temperature show that a strong luminescence peak at about 512 nm corresponding to the band gap can be observed on the synthesized CdS micropillar. Unlike CdS microparticles, emission peaks corresponding to band edges near 521 and 543 nm, 528 and 550 nm, respectively, were observed on the synthesized CdS nanoribbons and nanorod samples. Also, the synthesized CdS nanoribbons and nanorods exhibit broad peaks at about 710 and 712 nm, the appearance of which is related to structural defects, ion defects or impurities. Compared with the luminescent properties of CdS nanoribbons, the synthesized CdS nanorods show enhanced luminescence properties.