The preparation techniques of Mg-mischmetal intermediate alloy and the effects of the mischmetal addition ranging from 0.45% to 1.04% on the microstructure and
The Pr(TTA)3phen(C2H5OH)quarternary complex with 2-thenoyltrifluoro-acetone(TTA), 1,10-phenanthroline(phen)and ethanol were synthesized and characterized by sin
Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrat