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使用自洽二维数字模拟软件优化半导体激光器的外延结构,对GaInAs/AlGaAs分别限制压应变单量子阱结构进行了模拟,研究了包层和波导层的Al组分对工作电压的影响。根据模拟结果,采用金属有机化学淀积(MOCVD)技术,外延生长了单量子阱976nm激光器材料。利用该材料制作成2mm腔长的连续(CW)单管器件,采用C-mount载体标准封装,并进行了测试。测试结果表明,模拟与实验的结论一致,降低优化包层和波导层的Al组分可以减小工作电压,从而提高了976nm半导体激光器的转换效率。室温下,当工作电流为500A/cm2时,包层和波导层Al组分分别为0.35和0.15时,激光器的工作电压降低为1.63V,使得电光转换效率达到67%。
The self-consistent two-dimensional numerical simulation software was used to optimize the epitaxial structure of the semiconductor laser. The structure of GaInAs / AlGaAs confined by a single quantum well was simulated. The effect of Al composition in the cladding layer and the waveguide layer on the operating voltage was studied. According to the simulation results, single quantum well 976nm laser material was epitaxially grown by metalorganic chemical deposition (MOCVD). Using this material, a continuous (CW) single-tube device fabricated in a 2 mm cavity length was packaged in a C-mount carrier and tested. The test results show that the simulation and experimental conclusions are consistent, reducing the optimized cladding and waveguide layer Al composition can reduce the operating voltage, thereby increasing the 976nm semiconductor laser conversion efficiency. At room temperature, when the working current is 500A / cm2, the clad layer and the waveguide layer Al components were 0.35 and 0.15, respectively, the working voltage of the laser was reduced to 1.63V, making the electro-optical conversion efficiency of 67%.