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X射线衍射与高分辨电子显微术证实了在球磨条件下可发生α SiC向β SiC的转变 .高分辨电子显微术证实α SiC中的 6H SiC向β( 3C) SiC的转变是通过磨球和粉末碰撞时在相邻密排面上引入不全位错实现的 .其基本过程是不全位错的运动使 6H的一个 ( 3,3)堆垛向 ( 4,2 ) ,( 5 ,1 )至 ( 6 ,0 )堆垛序过渡 ,形成 6层 3C SiC的{1 1 1 }堆垛 ,相继进行这一过程即可完成 6H SiC向 3C SiC的转变 .
X-ray diffraction and high-resolution electron microscopy confirmed the transformation of α SiC to β SiC under ball milling conditions.High-resolution electron microscopy confirmed that the transformation of 6H SiC to β (3C) SiC in α SiC was achieved by grinding Ball and powder collision in the adjacent dense row surface to introduce incomplete dislocation to achieve its basic process is not full dislocation of the 6H so that a (3,3) stack (4,2), (5,1 ) To (6, 0) stacking transitions to form a stack of 6 layers of 3C SiC {1 1 1}. This process can be followed by the transformation of 6H SiC to 3C SiC.