前言成为微细加工技术应用先驱的半导体MOS存储器,现正迎来正式批量生产兆位级器件的时代,为适应这一时代,微细加工技术也要适应各种新加工(例如金属硅化物、Al-Cu-Si、Si基板、多层抗蚀剂以及象多晶硅那样的多层膜等)工艺的要求,干法蚀刻工艺也要不断多样化,一方面,为了提高器件的生产率、圆片的大直径化也要和 Foreword To become a pioneer in the field of micromachining technology semiconductor MOS memory is now usher in an official mass production of megabit devices era, in order to adapt to this era, micro-processing technology should also adapt to a variety of new processing (such as metal silicide, Al- Cu-Si, Si substrate, multi-layer resist and multi-layer film like polycrystalline silicon, etc.), the dry etching process should be diversified. On the one hand, in order to improve the productivity of the device, Must also be