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采用扫描电镜(SEM)和光学显微镜(OM)观察物理气相传输(PVT)法生长掺V6H-SiC单晶新鲜表面时,发现具有特定形状的析出相,经SEM能谱(EDX)测试确定析出相的主要成分是V,推断其在单晶生长结束后的降温过程中产生。通过对V析出相的进一步研究发现其在数量、尺寸以及方向上都与单晶生长中心具有一定的关系,具有特定的分布规律,任何一个视场,析出相的取向只有两种,且数量相当,这一结果说明结晶动力学对V的掺入具有一定的影响;当结晶温度较高时,这种影响不明显,但随着结晶区温度的降低,影响加剧,从而出现析出相,且析出相的结晶行为完全受晶体表面形貌的制约。
When the V6H-SiC single crystal fresh surface was grown by physical vapor deposition (PVT) with scanning electron microscope (SEM) and optical microscope (OM), precipitates with specific shape were found and the precipitates were determined by SEM EDX The main constituent is V, which is deduced to be generated during the cooling process after the single crystal growth has ended. Through the further study of the V precipitation phase, it has found that it has a certain relationship with the growth center of the single crystal in the number, size and direction, and has a specific distribution law. There is only two kinds of orientations of precipitates in any one field of view, , This result shows that the crystallization kinetics has a certain influence on the incorporation of V; when the crystallization temperature is high, the effect is not obvious, but as the temperature of the crystallization zone decreases, the influence is aggravated, so the precipitated phase appears and precipitates The crystalline behavior of the phase is completely controlled by the topography of the crystal.