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在SIMOX材料的背面成功地制备了多孔硅层,再在正面故意注入1×1015cm-2剂量的铜杂质。经900℃退火,二次离子质谱（SIMS）测试表明钢杂质能穿过理层SiO2并在背面多孔硅处富集。用剖面投射电子显微镜（XTEM）分析了埋层SiO2和背面多孔硅层的微观结构,背面多孔硅层及其多孔硅层同硅衬底之间“树技状”的过渡区被认为是铜杂质有效的吸除中心。
A porous silicon layer was successfully prepared on the back side of the SIMOX material, and a dose of 1 × 10 15 cm -2 of copper impurities was deliberately injected on the front side. After annealing at 900 ° C, SIMS measurements showed that steel impurities could pass through the SiO2 layer and be enriched in the backside porous Si. The microstructure of the buried SiO2 layer and the backside porous silicon layer was analyzed by cross-sectional projection electron microscopy (XTEM). The transition region between the backside porous silicon layer and its porous silicon layer and the silicon substrate was considered as copper impurity Effective aspiration center.