过去十年内,MOS器件力排阻力,向前推进到更高的性能和密度。本文介绍MOS从速度比较慢密度相对低的工艺而发展到在随机存取存贮器中占领先地位的HMOSⅡ工艺。由于诞生了以HMOSⅡ制造的静态RAM,而使n沟道MOS首次达到了比双极型器件更短的存取时间,同时又保持着其低功耗优点及降压工作能力。几年来,MOS LSI已得到许多不同的工 Over the past ten years, MOS devices force rejection, moving forward to higher performance and density. This article describes the evolution of MOS from a relatively slow speed process to an HMOS II process that takes precedence in random access memory. Due to the birth of static RAM made with HMOS II, n-channel MOS has for the first time achieved shorter access times than bipolar devices while maintaining its low power consumption and buck capability. Over the years, MOS LSI has got many different jobs