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利用提拉法生长Nd:La_(0.02)Lu_(0.98)VO_4单晶。经测试,晶体的晶胞参数a=b=0.7037 nm,c=0.6242 nm;a向和c向的热膨胀系数分别为α_a=4.32×10~(-6)K~(-1)和α_c=11.6×10~(-6) K~(-1)。室温下测试偏振吸收和荧光光谱,结果显示:晶体在809 nm处有较大的吸收线宽5.00 nm(σ)和6.15 nm(π),较大的吸收截面4.70×10~(-20) cm~2(σ)和10.47×10~(-20) cm~2(π)。在1065 nm处有强荧光发射峰,半峰宽分别为2.27 nm(σ)和1.82 nm(π),受激发射截面σ_e分别为6.51×10~(-19 )cm~2(σ)和13.8×10~(-19 )cm~2(π),荧光寿命为102.5μs。利用未镀膜的晶片进行初步激光实验,获得1065 nm连续和调Q激光输出。在最高泵浦功率20 W时,获得最高4.95 W的连续输出,光-光转换效率为24.75%,斜效率27.9%;在脉冲重复频率为5 kHz时,得到最高的峰值功率为61.99 kW。结果表明,Nd:La_(0.02)Lu_(0.98)VO_4晶体可能成为新的脉冲激光晶体。
Nd: La_ (0.02) Lu_ (0.98) VO_4 single crystal was grown by Czochralski method. The crystal lattice parameters a = b = 0.7037 nm and c = 0.6242 nm have been tested. The coefficients of thermal expansion in a and c directions are α_a = 4.32 × 10 -6 K -1 and α_c = 11.6 × 10 ~ (-6) K ~ (-1). The absorption and fluorescence spectra were measured at room temperature. The results show that the absorption band width is 5.00 nm (σ) and 6.15 nm (π) at 809 nm, and the larger absorption cross section is 4.70 × 10 ~ (-20) cm ~ 2 (σ) and 10.47 × 10 ~ (-20) cm ~ 2 (π). The peak emission intensity at 1065 nm was 2.27 nm (σ) and 1.82 nm (π), respectively. The stimulated emission cross sections σ_e were 6.51 × 10 ~ (-19) cm ~ 2 (σ) and 13.8 × 10 ~ (-19) cm ~ 2 (π), the fluorescence lifetime is 102.5μs. Preliminary laser experiments with uncoated wafers gave 1065 nm continuous and Q-switched laser outputs. At a maximum pump power of 20 W, a continuous output of up to 4.95 W was obtained, with a light-to-light conversion efficiency of 24.75% and a ramp efficiency of 27.9%, and a maximum peak power of 61.99 kW at a pulse repetition frequency of 5 kHz. The results show that the Nd: La_ (0.02) Lu_ (0.98) VO_4 crystal may become a new pulsed laser crystal.