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本文对 NiO 单晶及不掺杂和掺 Li,Al 的 NiO 陶瓷的高温(800～1400℃)电导率和温差电势进行了测量。在一定温度下,NiO 单晶的电导率与 P_(O_2)(?)成比例,不掺杂和掺 Al 的 NiO 陶瓷的电导率与 P_(O_2)(?)成比例,高温主缺陷为V″_(N(?)O)掺0.1mol%Li_2O 的 NiO 陶瓷的电导率,在低氧分压下,不随温度和氧分压而变化,由此计算出空穴迁移率μ为0.43cm~2/Vs。掺 Al 的 NiO 陶瓷在 P_(O_2)=10~5Pa,T>1200℃下的电导表观活化能为102.6kJ/mol。Ni_(1-(?))O 的非化学计量偏离量δ=7.75×10~(-2)exp(-16200/RT)。试验结果表明,采用电子空穴的宽能带传导机理比小极化子跃迁传导机理能较好地阐明塞贝克(温差电势)系数的温度关系。
In this paper, NiO single crystal and undoped and doped with Li, Al NiO ceramics at high temperature (800 ~ 1400 ℃) conductivity and temperature difference potential were measured. At a certain temperature, the conductivity of NiO single crystal is proportional to P_ (O_2) (?), And the conductivity of NiO without undoped and Al doped is proportional to P_ (O_2) (?). The main defect of high temperature is V The conductivity of NiO ceramics doped with 0.1 mol% Li 2 O at _ (N (?) O) did not change with the temperature and the partial pressure of oxygen under the condition of low oxygen partial pressure. From this, the hole mobility μ was calculated to be 0.43 cm ~ 2 / Vs.The apparent activation energy of Ni-doped AlO ceramics is 102.6kJ / mol at P_ (O_2) = 10 ~ 5Pa and T> 1200 ℃ .The non-stoichiometric deviation of Ni_ (1 - (Δ = 7.75 × 10 -2 exp (-16200 / RT)). The experimental results show that the wide band conduction mechanism using electron-hole can better explain Seebeck (temperature difference) Potential) coefficient of temperature.