采用松装熔渗方法制备Ｃｕ５０Ｃｒ５０真空断路器用触头材料。研究了电解Ｃｒ粉粒度、粉末的含氧量及添加Ｎｉ粉末对Ｃｕ５０Ｃｒ５０触头材料性能的影响。结果表明，使用粒度为７５μｍ～１５０μｍ的预处理电解铬粉末和无氧铜块，在干燥的氢气气氛中，于１２００℃进行３０ｍｉｎ熔渗，可获得含氧量为００３％、含氮量（００３～０００６）％、［质量］密度（７８～７９）ｇ／ｃｍ３、电导率（１５０～１７６）×１０７／Ω·ｍ的Ｃｕ５０Ｃｒ５０触头材料。添加Ｎｉ有利于提高触头材料的［质量］密度，但其电导率却有所降低。采用真空熔渗方法，可使Ｃｕ５０Ｃｒ５０触头材料的含氮量降至０００３％。 Preparation of Cu50Cr50 vacuum circuit breaker with loose melt infiltration method contact material. The effects of Cr particle size, oxygen content and Ni powder addition on the properties of Cu50Cr50 contact materials were investigated. The results show that pretreatment electrolytic chromium powder with particle size of 75μm ~ 150μm and oxygen-free copper block can be infiltrated at 1200 ℃ for 30min in a dry hydrogen atmosphere, and the oxygen content is 0. 03% (003 ~ 0006)%, [mass] density (78 ~ 79) g / cm3, conductivity (150 ~ 176) × 107 / Ω · m . Addition of Ni helps to increase the [mass] density of the contact material, but its conductivity decreases. Using vacuum infiltration method, the Cu50Cr50 contact material can reduce the nitrogen content of 0  003%.