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介绍了几种加固和非加固 MOS电路的质子辐照总剂量效应实验 ,质子束的能量为 9、 7、 5、 2 Me V.实验结果表明 ,在相同的吸收剂量下 ,MOS器件累积电离辐射损伤与质子能量成正比 .还给出了栅极偏压对器件质子辐射损伤的影响 ,结果认为 ,对于 NMOSFET,不论是加固器件 ,还是非加固器件 ,在 +5 V的栅压偏置下 ,器件的辐射损伤比 0 V栅压下的损伤严重 ,对于加固器件 ,辐射感生界面态的密度也较高 ;而加固型 PMOSFET,在 0 V的栅压下 ,辐射损伤比 - 5 V下严重 ,且界面态的密度高
The total dose effect of proton irradiation in several reinforced and unstructured MOS circuits is introduced, and the energy of the proton beam is 9, 7, 5 and 2 Me V. The experimental results show that under the same absorbed dose, the cumulative emission of ionizing radiation The damage is proportional to the proton energy. The effect of gate bias on the proton radiation damage is also demonstrated. The results show that for a NMOSFET, whether it be a reinforced device or a non-reinforced device, under a gate bias of +5 V, The radiation damage of the device is more serious than the 0 V gate voltage, and the density of the radiation-induced interface state is also higher for the stiffened device. In the reinforced PMOSFET, under the gate voltage of 0 V, the radiation damage ratio is worse than that at -5 V , And the density of the interface state is high