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在GaAs基底上已做出GaAs—GaAlAs—GaAs—GaAlAs异质结构,它与corning7056玻璃粘结,基底GaAs以及在基底GaAs上面的AlGaAs用化学方法腐蚀掉,腐蚀GaAs与AlGaAs的腐蚀剂分别为NH_4OH—H_2O_2与HF溶液。GaAs—AlGaAs玻璃结构具有特别好的形态、厚度均匀和透射式光电发射性能好的特点。
GaAs-GaAlAs-GaAs-GaAlAs heterostructures have been fabricated on GaAs substrates. The GaAs-GaAs-GaAlAs heterostructures are bonded to corning7056 glass, the underlying GaAs and the AlGaAs on the underlying GaAs are chemically etched away. The etchants of the etched GaAs and AlGaAs are respectively NH_4OH- H 2 O 2 and HF solution. GaAs-AlGaAs glass structure has a particularly good morphology, uniform thickness and transmissive photoelectric emission properties.