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七十年代,半导体存贮器有了迅速的发展。MOS存贮器同磁心存贮器等相比较具有容量大、集成度高、体积小,功耗低、速度快、非破坏性读出、可组合性及存贮器同逻辑电路的电平相容性等一系列优点。其缺点是易失性,即在电源关断后其信息就挥发掉。近来逐步发展了非易失性的新型结构的MN08等半导体存贮器,它具备了断电后保持信息的功能。一、存贮系统的概念一般计算机的存贮系统由行地址输入电路、行译码电路、行选择电路、列地址输入电路、列译码电路、列选择电路(读出/写入),存贮单元阵列、读写输入电路、数据通道等构成。为了便于讨论,存贮系统的结构可简化为图1所示。它分为译码(行及列)、存贮、控制和数据通道四部分。
Seventies, semiconductor memory has been rapid development. Compared with the magnetic core memory, the MOS memory has the advantages of large capacity, high integration, small size, low power consumption, high speed, non-destructive readout, combinability and the same level of memory as the logic circuit Capacitance and a series of advantages. The disadvantage is the volatility, that is, the information is volatile after the power is turned off. Recent developments have been the development of a nonvolatile, new-type semiconductor memory such as the MN08, which has the function of holding information after power-off. First, the storage system concept The general computer storage system consists of row address input circuit, row decoding circuit, row selection circuit, column address input circuit, column decoding circuit, column selection circuit (read / write), save A memory cell array, a read / write input circuit, a data channel, and the like. For ease of discussion, the structure of the storage system can be simplified as shown in FIG. It is divided into the decoding (row and column), storage, control and data channels in four parts.