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The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and mesa bottom corner,are investigated by numerical simulation.The simulation results show that a deep mesa height,a small mesa angle and a smooth mesa bottom(without sub-trench) could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution.Moreover,an optimized mesa structure without sub-trench(mesa height of 2.2 μm and mesa angle of 20°) is experimentally demonstrated.A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm~2 are obtained from the fabricated diode with a 30-μm thick N~- epi-layer,corresponding to 85% of the ideal parallel-plane value.The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge.
The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study. Three geometrical parameters, ie, mesa height, mesa angle and mesa bottom corner, are investigated by numerical simulation. simulation results show that a deep mesa height, a small mesa angle and a smooth mesa bottom (without sub-trench) could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution. Moreover, an optimized mesa structure without sub -trench (mesa height of 2.2 μm and mesa angle of 20 °) is experimentally demonstrated. A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A / cm ~ 2 are obtained from the fabricated diode with a 30-μm thick N ~ -epi-layer, corresponding to 85% of the ideal parallel-plane value. The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge.