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对典型双极晶体管的低剂量率辐射损伤增强效应进行了实验和数值模拟研究。选取了两种类型的双极晶体管,利用60Co放射源开展了不同剂量率下的辐照实验,分析了双极晶体管基极电流等参数的变化规律;建立了衬底型NPN晶体管理论模型,利用半导体模拟软件模拟了载流子在氧化层中的输运、捕获及释放等物理过程,得到了NPN晶体管基极电流随总剂量和剂量率的变化规律。结果表明,双极晶体管在不同剂量率下表现出低剂量率辐射损伤增强效应,主要是因为高剂量率和低剂量率下晶体管基区氧化层内产生的氧化物陷阱电荷所形成的空间电场不同。
Experiments and numerical simulations of the radiation damage enhancement effect of typical low-dose rate bipolar transistors were carried out. Two kinds of bipolar transistors were selected. The irradiation experiments at different dose rates were carried out by using 60Co radioactive sources. The variation regularity of parameters such as the base current of the bipolar transistor was analyzed. The theoretical model of the substrate NPN transistor was established. Semiconductor simulation software simulates the carrier transport in the oxide layer, capture and release of physical processes, obtained NPN transistor base current with the total dose and dose rate changes. The results show that bipolar transistors exhibit a low dose rate radiation damage enhancement effect at different dose rates, primarily due to the different spatial electric fields created by oxide trap charges generated in the base oxide layer of the transistor at high and low dose rates .