论文部分内容阅读
AlGaN/GaN fin-shaped metal-oxide-semiconductor high-electron-mobility transistors(fin-MOSHEMTs) with different fin widths(300nm and lOOnm) on sapphire substrates are fabricated and characterized.High-quality self-aligned Al_2O_3 gate dielectric underneath an 80-nm T-shaped gate is employed by aluminum self-oxidation,which induces 4 orders of magnitude reduction in the gate leakage current.Compared with conventional planar MOSHEMTs,short channel effects of the fabricated fin-MOSHEMTs are significantly suppressed due to the trigate structure,and excellent dc characteristics are obtained,such as extremely Bat output curves,smaller drain induced barrier lower,smaller subthreshold swing,more positive threshold voltage,higher transconductance and higher breakdown voltage.
AlGaN / GaN fin-shaped metal-oxide-semiconductor high-electron-mobility transistors (fin-MOSHEMTs) with different fin widths (300 nm and 100 nm) on sapphire substrates are fabricated and characterized. High-quality self-aligned Al 2 O 3 gate dielectric underneath 80-nm T-shaped gate is employed by aluminum self-oxidation, which induces 4 orders of magnitude reduction in the gate leakage current. Compared with conventional planar MOSHEMTs, short channel effects of the fabricated fin-MOSHEMTs are significantly suppressed due to the trigate structure, and excellent dc characteristics are such that extremely drain output curves, smaller drain induced barrier lower, smaller subthreshold swing, more positive threshold voltage, higher transconductance and higher breakdown voltage.