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利用金属有机化学气相沉积(MOCVD)方法在GaAs衬底上生长了不同组分的Zn1-xMnxSe薄膜。X射线衍射和X射线摇摆曲线证明样品具有较好的结晶质量。在低温、强磁场下对样品的发光进行了研究,在带边附近观察到两个发光峰的相对强度随着磁场增强发生了变化。通过变温光谱探讨了这两个发光峰的来源,并被分别归因于自由激子跃迁和与Mn有关的束缚态激子跃迁。同时随着磁场的增强,ZnMnSe带隙发光红移是由于类S带和类P带电子与Mn离子的3d5电子的自旋交换作用。
Different compositions of Zn1-xMnxSe thin films were grown on GaAs substrates by metal organic chemical vapor deposition (MOCVD). X-ray diffraction and X-ray rocking curve prove that the sample has good crystal quality. The luminescence of the sample was studied under low temperature and high magnetic field. The relative intensities of the two luminescence peaks observed near the band edge changed with the increase of the magnetic field. The sources of these two luminescence peaks were investigated by variable temperature spectroscopy and were attributed respectively to the free exciton transition and the bound state exciton transition associated with Mn. At the same time, with the enhancement of the magnetic field, ZnMnSe band gap luminescence redshift is due to the spin exchange of 3d5 electrons of quasi-S-like and P-like and Mn ions.