论文部分内容阅读
本文首次报道一种结构简单的１．５５μｍＩｎＧａＡｓＰ／ＩｎＰ部份增益耦合ＤＦＢ激光器与电吸收调制器的单片集成器件．该器件采用脊波导进行横模限制，阈值电流范围为３０～６０ｍＡ，典型边模抑制比大于４０ｄＢ，反向偏压３Ｖ时的消光比为１１ｄＢ．
This paper reports for the first time a monolithic integrated device with a simple structure of 1.55μmInGaAsP / InP partially gain-coupled DFB laser and electroabsorption modulator. The device uses transverse waveguide mode ridge limit, the threshold current range of 30 ~ 60mA, the typical side mode rejection ratio greater than 40dB, 3V reverse bias extinction ratio of 11dB.