许多半导体材料早已用作红外滤光片,计有长波辐射透射型和短波辐射吸收型之分,尤其是锗、硅、锑化铟得到广泛的应用。至于以砷化铟为基片的滤光片特性,则所知甚少,尽管在文献[1～3]中引用了其性能很类似应用的资料。砷化铟在室温和少量掺杂之下的本征吸 Many semiconductor materials have long been used as infrared filters, including long-wave radiation transmission and short-wave radiation absorption of the points, especially germanium, silicon, indium antimonide has been widely used. Little is known about the characteristics of indium-arsenide-based filters, although references in [1] to [3] that have very similar properties are cited. Intrinsic Absorption of Indium Arsenide at Room Temperature with Minor Doping