【摘 要】
:
通过模拟单色X 射线源下硅材料光栅泰伯自成像,研究振幅为均匀和高斯分布、光源尺寸与横向相干长度比值不同的单色扩展光源与金材料源光栅相结合的成像系统中光栅泰伯效应自成像条纹可见度的影响因素。计算结果表明,基于光栅的X 射线相衬成像系统中光栅泰伯自成像条纹可见度主要受成像距离和光源横向相干长度影响,受单色扩展光源的振幅分布和尺寸影响很小。
【机 构】
:
中国工程物理研究院流体物理研究所脉冲功率科学与技术重点实验室,四川绵阳621900
论文部分内容阅读
通过模拟单色X 射线源下硅材料光栅泰伯自成像,研究振幅为均匀和高斯分布、光源尺寸与横向相干长度比值不同的单色扩展光源与金材料源光栅相结合的成像系统中光栅泰伯效应自成像条纹可见度的影响因素。计算结果表明,基于光栅的X 射线相衬成像系统中光栅泰伯自成像条纹可见度主要受成像距离和光源横向相干长度影响,受单色扩展光源的振幅分布和尺寸影响很小。
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