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用x射线衍射形貌研究了液封直拉(LEC)技术在[111]方向生长的InP单晶中位错的产生和传播。首先,确定了由籽晶向生长晶体传播的位错的类型,并描述了采用缩颈过程的影响。柏格斯矢量的确定表明,位错是固着型的,柏格斯矢量平行于<(?)>方向,沿<(?)>方向传播。其次描述了晶体生长期间集结于晶体表面的位错传播。观察了位错的滑动传播,滑动是在三个向下倾斜的{111}滑移面上,它与[(?)]生长方向倾斜。对LEC生长晶体中高位错密度的有关机理进行了讨论。
The generation and propagation of dislocations in the InP single crystal grown in the [111] direction by Liquid Crystal CZT (LEC) technique was investigated by X-ray diffraction. First, the type of dislocations propagating from the seed to the growing crystal is determined and the effect of using the necking process is described. The determination of the Burgers vector shows that the dislocations are fixed and the Burgers vectors propagate parallel to the <(?)> Direction in the <(?)> Direction. Second, we describe the propagation of dislocations that are localized to the crystal surface during crystal growth. The slip propagation of dislocations was observed with the slip on three downward sloping {111} slip planes, which are tilted toward the [(?)] Growth direction. The mechanism of high dislocation density in LEC growth crystal is discussed.