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纯ZnO电阻率高,电学性能不稳定,通过掺杂其他元素提高其光电性能,制备出高质量的ZnO薄膜是实现其应用的关键。文章从制备方法、掺杂浓度和退火等方面综述了Sn掺杂ZnO(ZnO:Sn)薄膜光电性能的研究进展,提出了降低ZnO:Sn薄膜电阻率和提高透光率的有效途径。
Pure ZnO has high resistivity and unstable electrical properties. It is the key to realize high quality ZnO thin films by doping other elements to improve their optoelectronic properties. The progress of optoelectronic properties of Sn - doped ZnO (ZnO: Sn) thin films is reviewed from the aspects of preparation method, doping concentration and annealing. The effective ways to reduce the resistivity of ZnO: Sn thin films and improve the light transmittance are proposed.