论文部分内容阅读
分析了发生软失效的两种原因:电场诱导和热诱导。针对一种采用0.35μm BCD工艺的LDMOS器件,讨论了改变器件漂移区长度对软泄漏电流的影响。最终通过对漂移区长度以及源端和衬底接触间距的优化,消除了器件原先存在的软泄漏电流现象,并且没有过分增大器件的触发电压。
Two causes of soft failure are analyzed: electric field induction and heat induction. For a LDMOS device using a 0.35μm BCD process, the effect of varying the drift length of the device on the soft-leakage current is discussed. Finally, by optimizing the length of the drift region and the contact spacing between the source and the substrate, the original soft-leakage current of the device is eliminated and the device’s trigger voltage is not excessively increased.