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用离子注入技术实现了Al表面Fe、C元素的掺杂,并用XRD研究Fe、C掺杂对He离子注入Al表面晶格畸变的影响。结果发现,预先掺杂的Fe、C在Al表面的晶格畸变中扮演重要角色,且影响程度与掺杂剂量有关。随着预先掺杂Fe剂量的增大,Al表面晶格畸变量先减小后增加,表明小剂量的Fe掺杂有助于降低He离子注入引起的晶格畸变。C掺杂后能进一步降低预先掺杂Fe引起的晶格畸变,降低程度随C剂量的增加而增加。可见,小剂量的Fe和高剂量的C共掺杂能有效降低He离子注入后Al表面的晶格畸变。
The ion implantation technology was used to realize the doping of Fe and C elements on Al surface. The effect of Fe and C doping on the lattice distortion of Al ions implanted by He ions was investigated by XRD. The results show that pre-doped Fe and C play an important role in the lattice distortion of Al surface, and the degree of influence is related to the doping amount. With the increase of the dose of pre-doped Fe, the amount of lattice distortion on the Al surface first decreases and then increases, indicating that a small dose of Fe doping helps to reduce the lattice distortion caused by He ion implantation. C doping can further reduce the pre-doped lattice distortion caused by Fe, the degree of reduction increases with the increase of C dose. It can be seen that co-doping Fe and high-dose C can effectively reduce the lattice distortion of Al surface after He ion implantation.