数控衰减器在宽频带内具有高的衰减精度、优良的电压驻波比和大的衰减动态范围,因而得到了推广和应用。正电控制、低温漂6 bit数控衰减器,各衰减位均采用具有低温漂特性的桥T型结构,并通过对衰减结构的合理构建,在不采用电平转换驱动器的情况下,成功实现正电控制,面积得到进一步缩小。对电路进行了仿真与优化,采用GaAs工艺技术完成了流片,测试结果表明,在2.4~8 GHz频带内,参考态插入损耗小于4.0 dB;衰减精度小于±1 dB@31.5 dB;回波损耗小于-15 dB;衰减量在高温或低温时较常温时的偏差控制在0.3 dB以内;各衰减位为0.5,1,2,4,8和16 dB,最大衰减量为31.5 dB。单片数控衰减器芯片最终尺寸为2.9 mm×1.3 mm,控制电压为0 V和5 V。 The numerical control attenuator has high attenuation precision, excellent voltage standing wave ratio and large attenuation dynamic range in the wide frequency band, so it has been popularized and applied. Positive control, low temperature drift 6 bit digital attenuator, the attenuation bit are used with low temperature drift characteristics of the bridge T-type structure, and through the rational construction of the attenuation structure, without the use of level shifter case, the successful implementation of positive Electric control, the area has been further reduced. The simulation and optimization of the circuit were carried out. The GaAs process was used to complete the chip. The test results show that the insertion loss of the reference state is less than 4.0 dB in the 2.4-8 GHz band, the attenuation accuracy is less than ± 1 dB@31.5 dB, and the return loss Less than -15 dB. The deviation of the attenuation at or below normal temperature is controlled within 0.3 dB at high or low temperature. The attenuation is 0.5, 1, 2, 4, 8 and 16 dB, and the maximum attenuation is 31.5 dB. The final size of the monolithic digital attenuator chip is 2.9 mm × 1.3 mm and the control voltage is 0 V and 5 V.