研究作为电致发光的加速层的SiO_2中电子的输运行为.给出SiO_2层中陷阶辅助电荷输运的理论模型,并用实验对这一模型进行了验证.认为电致发光条件下SiO_1层中的电子在低场下是以陷阱跳跃的形式输运的,而在高场下陷阱中的电子离化进入导带. The transport behavior of electrons in SiO 2 as an accelerating layer of electroluminescence was investigated. A theoretical model of the trap-assisted charge transport in the SiO 2 layer was given and the model was verified by experiments. It is considered that the SiO 1 layer The electrons in the low field are transported in the form of trap jumps, while the electrons in the trap ionize into the conduction band at high field.