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设计合成了一种1,1-位为二(4-(N,N-二甲基胺基)苯基的新型噻咯单体,并与2,7-芴单体聚合得到六苯基噻咯单体投料量为1%、10%、20%的三种共聚物PF-N-HPS1～20.研究了这些共聚物的紫外吸收光谱、电化学性质、光致发光光谱和电致发光性能.PF-N-HPS的HOMO能级为5.25～5.58eV,呈现绿光发射.以PF-N-HPS为发光层,制作了三种聚合物发光二极管(器件结构A:ITO/PEDOT/PF-N-HPS/Al;器件结构B:ITO/PEDOT/PF-N-HPS/Ba/Al;器件结构C:ITO/PEDOT/PF-N-HPS/TPBI/Ba/Al).其中器件结构A的电致发光效率仅为0.1～0.33cd/A,说明PF-N-HPS中的4-(N,N-二甲基胺基)苯基结构不能使单独的Al阴极实现良好的电子注入.采用了低功函金属Ba阴极的器件结构B能改善电子的注入,使电致发光效率提高到0.85～1.44cd/A.器件结构C采用TPBI(HOMO:6.2eV)作为电子传输和空穴阻挡层,促进了电子和空穴的有效复合,进一步提高了电致发光效率(4.56～7.96cd/A),其中TPBI层将噻咯聚合物与金属阴极隔离可能减少发光层在阴极界面处的激子猝灭也起到了一定的作用,器件结构C较器件结构B还获得了更好的绿光光谱.
A novel silole monomer with 1,1- position bis (4- (N, N-dimethylamino) phenyl) was designed and synthesized and polymerized with 2,7-fluorene to give hexahydrophenylthiourea The results showed that the copolymers had the following properties: UV-Vis absorption spectra, electrochemical properties, photoluminescence spectra and electroluminescence properties of these copolymers were evaluated by using three copolymers PF-N-HPS1 ~ 20 with 1%, 10% and 20% The HOMO energy level of PF-N-HPS was 5.25-5.58eV, which showed green emission. Three kinds of polymer LEDs were fabricated using PF-N-HPS as the light-emitting layer (device structure A: ITO / PEDOT / PF- Device Structure B: ITO / PEDOT / PF-N-HPS / Ba / Al; Device Structure C: ITO / PEDOT / PF-N-HPS / TPBI / Ba / Al) The electroluminescence efficiency was only 0.1-0.33 cd / A, indicating that the 4- (N, N-dimethylamino) phenyl structure in PF-N-HPS did not allow good electron injection of the Al cathode alone. The device structure B with low work function metal Ba cathode can improve the electron injection and improve the electroluminescence efficiency to 0.85 ~ 1.44cd / A. Device structure C uses TPBI (HOMO: 6.2eV) as electron transport and hole blocking layer , Which promoted the effective recombination of electrons and holes and further enhanced the electroluminescence efficiency (4.56 ~ 7.96cd / A) In TPBI silole polymer layer and the metal cathode separator may be reduced at the cathode of the light emitting layer at the interface exciton quenching also play a role in the structure of the device than the device structure B C also get a better green light spectrum.