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The diamond-like compound Cu3PSe4 with low lattice thermal conductivity is deemed to be a promising thermoelectric material,which can directly convert waste heat into electricity or vice versa with no moving parts and greenhouse emissions.However,its performance is limited by its low electrical conductivity.In this study,we report an effective method to enhance thermoelectric performance of Cu3PSe4 by defect engineering.It is found that the carrier concentrations of Cu3-xPSe4(x = 0,0.03,0.06,0.09,0.12)compounds are increased by two orders of magnitude as x > 0.03,from 1 × 1017 to 1 × 1019 cm-3.Combined with the intrinsically low lattice thermal con-ductivities and enhanced electrical transport performance,a maximum zT value of 0.62 is obtained at 727 K for x = 0.12 sample,revealing that Cu defect regulation can be an effective method for enhancing thermoelectric perfor-mance of Cu3PSe4.