论文部分内容阅读
采用Si和SiO2两种介质材料构造一维缺陷光子晶体,缺陷层介质为Si,利用传输矩阵法对带有缺陷的一维光子晶体的传光特性进行了理论分析,并得到其带隙特性.由于缺陷的存在,使得光子晶体的透射谱中产生缺陷峰.当被测温度变化时,根据两种介质的热光效应和热膨胀效应,光子晶体介质和缺陷层的光学厚度和折射率发生变化,透射谱缺陷峰产生漂移,由缺陷峰的中心波长漂移量得到被测温度的大小.构建了一维缺陷光子晶体测量温度的实验系统,实验结果表明缺陷峰中心波长与光子晶体所受的温度呈线性关系,测量灵敏度为0·207nm/℃,测量范围为-20—120℃.
One-dimensional defect photonic crystals were fabricated by using Si and SiO2 dielectric materials, and the defect layer was Si. The transmission properties of one-dimensional photonic crystals with defects were analyzed by transmission matrix method and their band gap properties were obtained. Due to the existence of defects, the defect peaks are formed in the transmission spectrum of the photonic crystal.When the measured temperature changes, the optical thickness and refractive index of the photonic crystal medium and the defect layer change according to the thermo-optical effect and thermal expansion effect of the two media, The peak of the transmission spectrum defect is drifted and the measured temperature is obtained from the drift of the central wavelength of the defect peak.The experimental system for measuring the temperature of a one-dimensional defect photonic crystal is established. The experimental results show that the central wavelength of the defect peak and the temperature of the photonic crystal Linearity, measurement sensitivity of 0. 207nm / ℃, the measurement range of -20-120 ℃.