日本一技术开发机构经过实验确认 ,短波长的极紫外线可制造线宽 0 0 7μｍ的半导体元件 ,实用化后可将存储元件的信息存储容量提高 6 0倍。现在的半导体元件加工技术多采用波长 2 48ｎｍ的远紫外激光在衬底上曝光 ,能够蚀刻线宽为 0 2 5～ 0 15 μｍ的半导体元件。由日本政 Japan, a technology development agency experiments confirmed that the short-wave ultra-violet can be manufactured line width 0 0 7μm semiconductor components, practical information storage capacity of the storage element can be increased 60 times. Nowadays, the processing technology of semiconductor components is exposed on the substrate by far-UV laser with a wavelength of 248 nm to etch semiconductor elements with a line width of 0 2 5-0 15 μm. By the Japanese government