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以自制Mg0.2Zn0.8O∶Al陶瓷为靶材,采用磁控溅射工艺室温条件下在石英玻璃衬底上制备Mg0.2Zn0.8O∶Al紫外透明导电薄膜。研究溅射功率对Mg0.2Zn0.8O∶Al薄膜结构和光电性能的影响。测试结果表明:溅射功率不会明显影响薄膜中的成分及其浓度,并与靶材基本吻合;不同溅射功率下Mg0.2Zn0.8O∶Al薄膜均具有非常好的c轴择优取向生长特性,透光区域均扩展到紫外区域,而且随溅射功率从100W增大到200W,薄膜的晶粒有所增大,结晶程度明显提高,电阻率从50Ω·cm降低到不足1Ω·cm,透光率无明显差别,约为89%,带隙宽度略有减小,光吸收边略向长波方向移动,但溅射功率达到250W以后,薄膜质量有所下降,粗糙度增大,电阻率略有回升,透光率有所降低。
Mg0.2Zn0.8O: Al was prepared on quartz glass substrate by magnetron sputtering at room temperature. The effect of sputtering power on the structure and optical properties of Mg0.2Zn0.8O:Al thin films was investigated. The results show that the sputtering power does not significantly affect the composition and concentration of the film, and basically consistent with the target; Mg0.2Zn0.8O:Al films at different sputtering powers have very good c-axis preferred orientation growth characteristics , The light transmission area extended to the UV region, and with the sputtering power increased from 100W to 200W, the film has increased the grain size, significantly increased the degree of crystallization, the resistivity decreased from 50Ω · cm to less than 1Ω · cm, through The optical density was no significant difference, about 89%, the band gap width decreased slightly, the light absorption edge slightly to the long-wave direction, but after the sputtering power reaches 250W, the film quality has declined, the roughness increases, the resistivity slightly A rise, the light transmittance has decreased.