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等价元素锗 (Ge) ,掺入CZSi中后能提高硅中氧的固溶度和形成氧沉淀的临界半径 ,使得氧沉淀主要以均匀成核方式进行。同时 ,Ge容易与硅中空位形成较稳定的锗一空位复合体 (Ge—VX) ,降低了空位的浓度。因此 ,锗掺入到CZSi中可以抑制新施主 (ND)的形成速率和最大浓度 ,提高了硅的高温稳定性 ,改善硅材料的内在质量。随着Ge浓度的增加 ,这种抑制施主效应也越明显。本文简要地探讨了Ge在CZSi中抑制新施主形成的机理。
The equivalent element of germanium (Ge), incorporated into the CZSi can improve the solid solubility of oxygen in silicon and the critical radius of the formation of oxygen precipitation, so that the oxygen precipitation is mainly carried out by uniform nucleation. At the same time, Ge easily forms a more stable Ge-VX with the vacancies in silicon, reducing the concentration of vacancies. Therefore, the incorporation of germanium into CZSi can restrain the formation rate and maximum concentration of new donor (ND), improve the high temperature stability of silicon and improve the inherent quality of the silicon material. With the increase of Ge concentration, this inhibition of donor effect is also more obvious. This article briefly discusses the mechanism by which Ge inhibits the formation of new donors in CZSi.