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介绍了一种适用于电荷耦合器件(CCD)的静电保护电路。在对该静电保护电路工作原理分析的基础上,通过电路仿真确定了静电保护电路中MOS管的电学参数,再由半导体器件仿真确定了其工艺条件,并按此条件制作了静电保护电路。通过人体模型静电放电试验对该静电保护电路进行测试,结果表明CCD的抗静电能力由原来的不足100V提高到450V。
An electrostatic protection circuit suitable for charge-coupled device (CCD) is introduced. Based on the analysis of the working principle of the ESD protection circuit, the electrical parameters of the MOS tube in the ESD protection circuit are determined by the circuit simulation. The semiconductor device is used to simulate the process conditions and the ESD protection circuit is fabricated. The human body model electrostatic discharge test of the electrostatic protection circuit was tested, the results show that the anti-static ability of CCD from less than 100V to 450V.